Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors †

This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical...

Low Voltage Electron Multiplying CCD in a CMOS Process

Low light level and high-speed image sensors as required for space applications can suffer from a decrease in the signal to noise ratio (SNR) due to the photon-starved environment and limitations of the sensor’s readout noise. The SNR can be increased by the implementation of Time Delay Integration (TDI) as it allows photoelectrons from multiple exposures to be summed in the charge domain with ...

CCD Image Sensors and Analog-to-Digital Conversion

Phosphor Coated UV- Responsive CCD Image Sensors

High resolution x-ray and -ray imaging using a scintillator-coupled electron-multiplying CCD

Over the last decade the rapid advancements in CCD technology have lead to significant developments in the field of low-light-level, Electron-Multiplying CCDs (EM-CCDs). The addition of a gain register before output allows signal electrons to be multiplied without increasing the external noise. This low effective readout noise, which can be reduced to the sub-electron level, allows very small s...